Preparation of Silicon Carbide Refractory Coating by Chemical Vapor Deposition Using Hexamethyldisilylamine Precursor.

MOHAMMADREZA AZIMA NAJAFABADI¹

Abstract :
For the first time, by chemical vapor deposition (CVD) using hexamethyldisilylamine (HMDS, C6H19NSi2) as a precursor and N2 as a carrier gas in the medium temperature range, a silicon carbide (SiC) coating was deposited on a C/C composite substrate. given. Using X-ray diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM), the effects of deposition temperature on the phase structure, surface morphology and coating deposition rate were studied. This coating at temperatures of 1010 °C, 1060 °C and 1100 °C β-SiC phase (3C), at temperatures of 1130 °C and 1180 °C the simultaneous presence of α-SiC (2H) and β-SiC (3C) phases, and at the temperature of 1220 °C, it again displays the single phase of β-SiC (3C). By changing the deposition temperature, the morphology and microstructure of this coating changes significantly. The change of phase structure and surface morphology is closely related to the nucleation, growth and formation of defects in SiC crystals during the CVD process.

Keywords : sic coating cvd crystal stacking faults twin

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زبان مقاله : انگلیسی
محور مقاله : مهندسی شیمی
محل انتشار : اولین کنگره بین المللی علوم، مهندسی و فن آوری های نو
آدرس وب سایت کنفرانس : secongress.com/1st
کد IOI مقاله : XEHE-HCFBK
لینک مستقیم مقاله : https://isnac.ir/XEHE-HCFBK
نمایش چکیده فارسی : https://isnac.ir/SA/XEHE-HCFBK

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1. Preparation of Silicon Carbide Refractory Coating by Chemical Vapor Deposition Using Hexamethyldisilylamine Precursor.

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